- Product Model TK56E12N1,S1X
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N CH 120V 56A TO-220
- Classification Single FETs, MOSFETs
-
PDF
Inventory:1512
Pricing:
- 1 1.57
- 50 1.26
- 100 1.04
- 500 0.88
- 1000 0.75
- 2000 0.71
- 5000 0.68
- 10000 0.68
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 56A (Ta)
- Rds On (Max) @ Id, Vgs 7mOhm @ 28A, 10V
- Power Dissipation (Max) 168W (Tc)
- Vgs(th) (Max) @ Id 4V @ 1mA
- Supplier Device Package TO-220
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 120 V
- Gate Charge (Qg) (Max) @ Vgs 69 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 4200 pF @ 60 V
Related Products
MOSFET N-CH 150V 11.5/152A TO220
Inventory: 0
