- Product Model VS-ETH3006S-M3
- Brand Vishay General Semiconductor – Diodes Division
- RoHS Yes
- Description DIODE GEN PURP 600V 30A TO263AB
- Classification Single Diodes
-
PDF
- 1 1.81
- 50 1.46
- 100 1.2
- 500 1.01
- 1000 0.86
- 2000 0.82
- 5000 0.79
- 10000 0.76
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Speed Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr) 26 ns
- Technology Standard
- Current - Average Rectified (Io) 30A
- Supplier Device Package TO-263AB (D2PAK)
- Operating Temperature - Junction -65°C ~ 175°C
- Voltage - DC Reverse (Vr) (Max) 600 V
- Voltage - Forward (Vf) (Max) @ If 2.65 V @ 30 A
- Current - Reverse Leakage @ Vr 30 µA @ 600 V
Related Products
IC REG LINEAR POS ADJ 500MA 8SO
Inventory: 9432
DIODE GEN PURP 400V 20A D2PAK
Inventory: 48240
DIODE GEN PURP 600V 30A TO263AB
Inventory: 7496
DIODE GEN PURP 600V 30A TO263AB
Inventory: 7919
DIODE GEN PURP 600V 30A TO263AB
Inventory: 0
DIODE GEN PURP 600V 30A TO263AB
Inventory: 4675
