Technical Details

• Package / Case i4-Pac™-5 (3 Leads)
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 1A (Tc)
• Rds On (Max) @ Id, Vgs 40Ohm @ 500mA, 10V
• Power Dissipation (Max) 110W
• Vgs(th) (Max) @ Id 4V @ 250µA
• Supplier Device Package ISOPLUS i4-PAC™
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 2500 V
• Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 1660 pF @ 25 V