Technical Details

• Package / Case TO-257-3
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 225°C (TJ)
• Technology SiC (Silicon Carbide Junction Transistor)
• Current - Continuous Drain (Id) @ 25°C 4A (Tc) (165°C)
• Rds On (Max) @ Id, Vgs 415mOhm @ 4A
• Power Dissipation (Max) 47W (Tc)
• Supplier Device Package TO-257
• Drain to Source Voltage (Vdss) 650 V
• Input Capacitance (Ciss) (Max) @ Vds 324 pF @ 35 V