Technical Details

• Package / Case TO-247-3
• Mounting Type Through Hole
• Operating Temperature 175°C (TJ)
• Technology SiC (Silicon Carbide Junction Transistor)
• Current - Continuous Drain (Id) @ 25°C 4A (Tc) (95°C)
• Rds On (Max) @ Id, Vgs 480mOhm @ 4A
• Power Dissipation (Max) 106W (Tc)
• Supplier Device Package TO-247AB
• Drain to Source Voltage (Vdss) 1700 V