- Product Model 1N8031-GA
- Brand GeneSiC Semiconductor
- RoHS No
- Description DIODE SIL CARBIDE 650V 1A TO276
- Classification Single Diodes
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Inventory:1500
Technical Details
- Package / Case TO-276AA
- Mounting Type Through Hole
- Speed No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr) 0 ns
- Technology SiC (Silicon Carbide) Schottky
- Capacitance @ Vr, F 76pF @ 1V, 1MHz
- Current - Average Rectified (Io) 1A
- Supplier Device Package TO-276
- Operating Temperature - Junction -55°C ~ 250°C
- Voltage - DC Reverse (Vr) (Max) 650 V
- Voltage - Forward (Vf) (Max) @ If 1.5 V @ 1 A
- Current - Reverse Leakage @ Vr 5 µA @ 650 V