Technical Details

• Package / Case TO-257-3
• Mounting Type Through Hole
• Speed No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr) 0 ns
• Technology SiC (Silicon Carbide) Schottky
• Capacitance @ Vr, F 237pF @ 1V, 1MHz
• Current - Average Rectified (Io) 8A
• Supplier Device Package TO-257
• Operating Temperature - Junction -55°C ~ 250°C
• Voltage - DC Reverse (Vr) (Max) 1200 V
• Voltage - Forward (Vf) (Max) @ If 1.6 V @ 2.5 A
• Current - Reverse Leakage @ Vr 10 µA @ 1200 V