Technical Details

• Package / Case 3-SIP
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 125°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 80mV @ 10mA, 100mA
• Current - Collector Cutoff (Max) 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 280 @ 50mA, 2V
• Frequency - Transition 250MHz
• Supplier Device Package 3-SPA
• Current - Collector (Ic) (Max) 700 mA
• Voltage - Collector Emitter Breakdown (Max) 15 V
• Power - Max 250 mW