- Product Model TK100E10N1,S1X
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 100V 100A TO220
- Classification Single FETs, MOSFETs
-
PDF
- 1 3.83
- 50 3.03
- 100 2.6
- 500 2.31
- 1000 1.98
- 2000 1.86
- 5000 1.79
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 100A (Ta)
- Rds On (Max) @ Id, Vgs 3.4mOhm @ 50A, 10V
- Power Dissipation (Max) 255W (Tc)
- Vgs(th) (Max) @ Id 4V @ 1mA
- Supplier Device Package TO-220
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 8800 pF @ 50 V
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