Technical Details

• Package / Case 8-TQFN Exposed Pad
• Mounting Type Surface Mount
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 11A (Ta), 58A (Tc)
• Rds On (Max) @ Id, Vgs 13.5mOhm @ 35A, 10V
• Vgs(th) (Max) @ Id 4V @ 100µA
• Supplier Device Package 8-PQFN (5x6)
• Drain to Source Voltage (Vdss) 100 V
• Gate Charge (Qg) (Max) @ Vgs 87 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 3240 pF @ 25 V