- Product Model FDD86113LZ
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description MOSFET N-CH 100V 4.2A/5.5A DPAK
- Classification Single FETs, MOSFETs
-
PDF
- 2500 0.51
- 5000 0.49
- 12500 0.46
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 4.2A (Ta), 5.5A (Tc)
- Rds On (Max) @ Id, Vgs 104mOhm @ 4.2A, 10V
- Power Dissipation (Max) 3.1W (Ta), 29W (Tc)
- Vgs(th) (Max) @ Id 3V @ 250µA
- Supplier Device Package TO-252AA
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 285 pF @ 50 V
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