Technical Details

• Package / Case 6-WDFN Exposed Pad
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 10A (Ta)
• Rds On (Max) @ Id, Vgs 16mOhm @ 10A, 4.5V
• Power Dissipation (Max) 2.4W (Ta)
• Vgs(th) (Max) @ Id 1V @ 250µA
• Supplier Device Package 6-MicroFET (2x2)
• Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
• Vgs (Max) ±8V
• Drain to Source Voltage (Vdss) 12 V
• Gate Charge (Qg) (Max) @ Vgs 29 nC @ 6 V
• Input Capacitance (Ciss) (Max) @ Vds 3405 pF @ 6 V