Technical Details

• Package / Case 8-PowerVDFN
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 20A (Ta), 40A (Tc)
• Rds On (Max) @ Id, Vgs 4.5mOhm @ 20A, 10V
• FET Feature Schottky Diode (Body)
• Power Dissipation (Max) 3.1W (Ta), 36W (Tc)
• Vgs(th) (Max) @ Id 2V @ 250µA
• Supplier Device Package 8-DFN-EP (3x3)
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±12V
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 15 V