- Product Model CSD25211W1015
- Brand Texas Instruments
- RoHS Yes
- Description MOSFET P-CH 20V 3.2A 6DSBGA
- Classification Single FETs, MOSFETs
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Inventory:1883
Pricing:
- 3000 0.17
- 6000 0.17
- 9000 0.15
- 30000 0.15
Technical Details
- Package / Case 6-UFBGA, DSBGA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 3.2A (Ta)
- Rds On (Max) @ Id, Vgs 33mOhm @ 1.5A, 4.5V
- Power Dissipation (Max) 1W (Ta)
- Vgs(th) (Max) @ Id 1.1V @ 250µA
- Supplier Device Package 6-DSBGA (1x1.5)
- Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
- Vgs (Max) -6V
- Drain to Source Voltage (Vdss) 20 V
- Gate Charge (Qg) (Max) @ Vgs 4.1 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 10 V