Technical Details

• Package / Case TO-262-3 Full Pack, I2PAK
• Mounting Type Through Hole
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 17A (Tc)
• Rds On (Max) @ Id, Vgs 270mOhm @ 8.5A, 10V
• Power Dissipation (Max) 40W (Tc)
• Vgs(th) (Max) @ Id 4.5V @ 100µA
• Supplier Device Package TO-281 (I2PAKFP)
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±30V
• Drain to Source Voltage (Vdss) 500 V
• Gate Charge (Qg) (Max) @ Vgs 119 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 25 V