- Product Model IPB100N04S4H2ATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 40V 100A TO263-3
- Classification Single FETs, MOSFETs
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Inventory:6496
Pricing:
- 1000 1.3
- 2000 1.23
- 5000 1.19
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 100A (Tc)
- Rds On (Max) @ Id, Vgs 2.4mOhm @ 100A, 10V
- Power Dissipation (Max) 115W (Tc)
- Vgs(th) (Max) @ Id 4V @ 70µA
- Supplier Device Package PG-TO263-3-2
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 40 V
- Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 7180 pF @ 25 V