- Product Model TK9A60D(STA4,Q,M)
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 600V 9A TO220SIS
- Classification Single FETs, MOSFETs
Inventory:1540
Pricing:
- 1 1.88
- 50 1.51
- 100 1.25
- 500 1.05
- 1000 0.89
- 2000 0.85
- 5000 0.82
- 10000 0.82
Technical Details
- Package / Case TO-220-3 Full Pack
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 9A (Ta)
- Rds On (Max) @ Id, Vgs 830mOhm @ 4.5A, 10V
- Power Dissipation (Max) 45W (Tc)
- Vgs(th) (Max) @ Id 4V @ 1mA
- Supplier Device Package TO-220SIS
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25 V
