- Product Model TK5A65DA(STA4,Q,M)
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 650V 4.5A TO220SIS
- Classification Single FETs, MOSFETs
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Inventory:1545
Pricing:
- 1 1.53
- 50 1.23
- 100 1.01
- 500 0.86
- 1000 0.73
- 2000 0.69
- 5000 0.66
- 10000 0.64
Technical Details
- Package / Case TO-220-3 Full Pack
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 4.5A (Ta)
- Rds On (Max) @ Id, Vgs 1.67Ohm @ 2.3A, 10V
- Power Dissipation (Max) 35W (Tc)
- Vgs(th) (Max) @ Id 4.4V @ 1mA
- Supplier Device Package TO-220SIS
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 25 V
