- Product Model TK2A65D(STA4,Q,M)
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 650V 2A TO220SIS
- Classification Single FETs, MOSFETs
-
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Inventory:1550
Pricing:
- 1 1.39
- 50 1.11
- 100 0.88
- 500 0.75
- 1000 0.61
- 2000 0.57
- 5000 0.55
- 10000 0.52
Technical Details
- Package / Case TO-220-3 Full Pack
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 2A (Ta)
- Rds On (Max) @ Id, Vgs 3.26Ohm @ 1A, 10V
- Power Dissipation (Max) 30W (Tc)
- Vgs(th) (Max) @ Id 4.4V @ 1mA
- Supplier Device Package TO-220SIS
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 25 V
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