Technical Details

• Package / Case 4-UFDFN
• Mounting Type Surface Mount
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 150mA (Ta)
• Rds On (Max) @ Id, Vgs 3.7Ohm @ 80mA, 4V
• Power Dissipation (Max) 150mW (Ta)
• Supplier Device Package 4-ECSP1008
• Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V
• Vgs (Max) ±10V
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 1.58 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 7 pF @ 10 V