Technical Details

• Package / Case TO-3P-3, SC-65-3
• Mounting Type Through Hole
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 2A (Ta)
• Rds On (Max) @ Id, Vgs 13Ohm @ 1A, 10V
• Power Dissipation (Max) 2.5W (Ta), 110W (Tc)
• Supplier Device Package TO-3PB
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 1500 V
• Gate Charge (Qg) (Max) @ Vgs 37.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 30 V