- Product Model C4D10120E
- Brand Wolfspeed
- RoHS Yes
- Description DIODE SIL CARB 1.2KV 33A TO252-2
- Classification Single Diodes
-
PDF
- 1 12.54
- 75 10.15
- 150 9.55
- 525 8.66
- 1050 7.94
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Speed No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr) 0 ns
- Technology SiC (Silicon Carbide) Schottky
- Capacitance @ Vr, F 754pF @ 0V, 1MHz
- Current - Average Rectified (Io) 33A
- Supplier Device Package TO-252-2
- Operating Temperature - Junction -55°C ~ 175°C
- Voltage - DC Reverse (Vr) (Max) 1200 V
- Voltage - Forward (Vf) (Max) @ If 1.8 V @ 10 A
- Current - Reverse Leakage @ Vr 250 µA @ 1200 V
Related Products
SICFET N-CH 900V 35A D2PAK-7
Inventory: 4286
SICFET N-CH 1200V 30A D2PAK-7
Inventory: 5562
DIODE SIL CARB 1.2KV 19A TO252-2
Inventory: 4130
DIODE SIL CARB 1.2KV 24.5A TO252
Inventory: 1057
DIODE SIL CARB 1.2KV 33A TO252-2
Inventory: 4840
DIODE SIL CARB 1.2KV 56A TO263-2
Inventory: 2576
DIODE SIL CARBIDE 1.2KV TO252AA
Inventory: 1915
1200V, 75A, 7-PIN SMD, TRENCH-ST
Inventory: 925
DIODE SIL CARB 1.2KV 10A DPAK HV
Inventory: 4981
