- Product Model SI2337DS-T1-GE3
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET P-CH 80V 2.2A SOT23-3
- Classification Single FETs, MOSFETs
-
PDF
- 3000 0.4
- 6000 0.38
- 9000 0.36
Technical Details
- Package / Case TO-236-3, SC-59, SOT-23-3
- Mounting Type Surface Mount
- Operating Temperature -50°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 2.2A (Tc)
- Rds On (Max) @ Id, Vgs 270mOhm @ 1.2A, 10V
- Power Dissipation (Max) 760mW (Ta), 2.5W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package SOT-23-3 (TO-236)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 80 V
- Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 40 V
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