- Product Model BSZ16DN25NS3GATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 250V 10.9A 8TSDSON
- Classification Single FETs, MOSFETs
-
PDF
- 5000 0.92
- 10000 0.89
Technical Details
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 10.9A (Tc)
- Rds On (Max) @ Id, Vgs 165mOhm @ 5.5A, 10V
- Power Dissipation (Max) 62.5W (Tc)
- Vgs(th) (Max) @ Id 4V @ 32µA
- Supplier Device Package PG-TSDSON-8
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 250 V
- Gate Charge (Qg) (Max) @ Vgs 11.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 920 pF @ 100 V
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