- Product Model FDP036N10A
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description MOSFET N-CH 100V 120A TO220-3
- Classification Single FETs, MOSFETs
-
PDF
- 1 5.36
- 50 4.24
- 100 3.64
- 500 3.23
- 1000 2.77
- 2000 2.61
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 120A (Tc)
- Rds On (Max) @ Id, Vgs 3.6mOhm @ 75A, 10V
- Power Dissipation (Max) 333W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-220-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 116 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 7295 pF @ 25 V
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