- Product Model FDI150N10
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description MOSFET N-CH 100V 57A I2PAK
- Classification Single FETs, MOSFETs
-
PDF
- 1 2.84
- 50 2.28
- 100 1.88
- 500 1.59
- 1000 1.35
- 2000 1.28
- 5000 1.23
Technical Details
- Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 57A (Tc)
- Rds On (Max) @ Id, Vgs 16mOhm @ 49A, 10V
- Power Dissipation (Max) 110W (Tc)
- Vgs(th) (Max) @ Id 4.5V @ 250µA
- Supplier Device Package TO-262 (I2PAK)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 69 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 4760 pF @ 25 V
Related Products
MOSFET N-CH 100V 268A D2PAK
Inventory: 5300
MOSFET N-CH 100V 15.7A DPAK
Inventory: 8769
MOSFET N-CH 100V 140A TO3PN
Inventory: 605
MOSFET N-CH 100V 56A I2PAK
Inventory: 800
MOSFET N-CH 100V 56A I2PAK
Inventory: 5257
MOSFET N-CH 100V 35A/267A 8TDFNW
Inventory: 5112
PTNG 100V LL SO8FL
Inventory: 0
