Technical Details

• Package / Case 8-VQFN Exposed Pad
• Mounting Type Surface Mount
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 26A (Ta), 40A (Tc)
• Rds On (Max) @ Id, Vgs 2.5mOhm @ 20A, 4.5V
• Vgs(th) (Max) @ Id 1.1V @ 50µA
• Supplier Device Package PQFN (3x3)
• Drain to Source Voltage (Vdss) 20 V
• Gate Charge (Qg) (Max) @ Vgs 78 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 3620 pF @ 10 V