Technical Details

• Package / Case 8-VQFN Exposed Pad
• Mounting Type Surface Mount
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 21A (Ta), 40A (Tc)
• Rds On (Max) @ Id, Vgs 3.8mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id 2.35V @ 50µA
• Supplier Device Package PQFN (3x3)
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 2155 pF @ 25 V