- Product Model IPI076N12N3GAKSA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 120V 100A TO262-3
- Classification Single FETs, MOSFETs
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Inventory:1998
Pricing:
- 1 3.28
- 10 2.76
- 100 2.23
- 500 1.98
- 1000 1.7
- 2000 1.6
- 5000 1.53
Technical Details
- Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 100A (Tc)
- Rds On (Max) @ Id, Vgs 7.6mOhm @ 100A, 10V
- Power Dissipation (Max) 188W (Tc)
- Vgs(th) (Max) @ Id 4V @ 130µA
- Supplier Device Package PG-TO262-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 120 V
- Gate Charge (Qg) (Max) @ Vgs 101 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 6640 pF @ 60 V
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