- Product Model IPB60R099C6ATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 600V 37.9A D2PAK
- Classification Single FETs, MOSFETs
-
PDF
- 1000 3.47
- 2000 3.25
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 37.9A (Tc)
- Rds On (Max) @ Id, Vgs 99mOhm @ 18.1A, 10V
- Power Dissipation (Max) 278W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 1.21mA
- Supplier Device Package PG-TO263-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 119 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2660 pF @ 100 V
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