- Product Model IPB320N20N3GATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 200V 34A D2PAK
- Classification Single FETs, MOSFETs
-
PDF
- 1000 1.8
- 2000 1.69
- 5000 1.62
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 34A (Tc)
- Rds On (Max) @ Id, Vgs 32mOhm @ 34A, 10V
- Power Dissipation (Max) 136W (Tc)
- Vgs(th) (Max) @ Id 4V @ 90µA
- Supplier Device Package PG-TO263-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2350 pF @ 100 V
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