- Product Model IPB144N12N3GATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 120V 56A D2PAK
- Classification Single FETs, MOSFETs
-
PDF
- 1000 0.94
- 2000 0.89
- 5000 0.86
- 10000 0.83
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 56A (Ta)
- Rds On (Max) @ Id, Vgs 14.4mOhm @ 56A, 10V
- Power Dissipation (Max) 107W (Tc)
- Vgs(th) (Max) @ Id 4V @ 61µA
- Supplier Device Package PG-TO263-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 120 V
- Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3220 pF @ 60 V
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