Technical Details

• Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology SiC (Silicon Carbide Junction Transistor)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 70A (Tj)
• Rds On (Max) @ Id, Vgs 34mOhm @ 50A, 20V
• Power Dissipation (Max) 311W (Tc)
• Vgs(th) (Max) @ Id 4V @ 15mA
• Supplier Device Package TO-263-7
• Drive Voltage (Max Rds On, Min Rds On) 20V
• Vgs (Max) +25V, -10V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 177 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds 4150 pF @ 1000 V