Technical Details

• Package / Case 22-PowerBSOP Module
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology SiC (Silicon Carbide Junction Transistor)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 17A (Tc)
• Rds On (Max) @ Id, Vgs 129mOhm @ 4.7A, 20V
• Power Dissipation (Max) 100W (Tc)
• Vgs(th) (Max) @ Id 5.6V @ 1.7mA
• Supplier Device Package PG-HDSOP-22-1
• Drive Voltage (Max Rds On, Min Rds On) 15V, 20V
• Vgs (Max) +23V, -5V
• Drain to Source Voltage (Vdss) 750 V
• Gate Charge (Qg) (Max) @ Vgs 12 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds 351 pF @ 500 V