Technical Details

• Package / Case TO-261-4, TO-261AA
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 175°C
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 3A
• Rds On (Max) @ Id, Vgs 180mOhm @ 1.5A, 10V
• Power Dissipation (Max) 3.3W
• Vgs(th) (Max) @ Id 4V @ 250µA
• Supplier Device Package SOT-223
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 100 V
• Gate Charge (Qg) (Max) @ Vgs 16.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 25 V