Technical Details

• Package / Case TO-247-3
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology SiC (Silicon Carbide Junction Transistor)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 21A (Tc)
• Rds On (Max) @ Id, Vgs 150mOhm @ 13.3A, 20V
• Power Dissipation (Max) 156W (Tc)
• Vgs(th) (Max) @ Id 4V @ 3.3mA
• Supplier Device Package TO-247AD
• Drive Voltage (Max Rds On, Min Rds On) 20V
• Vgs (Max) +20V, -5V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 29.6 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds 652 pF @ 1000 V