- Product Model GT011N03D5E
- Brand Goford Semiconductor
- RoHS Yes
- Description MOSFET N-CH ESD 30V 209A DFN5*6-
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 6500
Pricing:
- 1 0.6
Technical Details
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 209A (Tc)
- Rds On (Max) @ Id, Vgs 0.95mOhm @ 10A, 10V
- Power Dissipation (Max) 89W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Supplier Device Package 8-DFN (4.9x5.75)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±18V
- Drain to Source Voltage (Vdss) 30 V
- Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 6503 pF @ 15 V
- ECCN EAR99
- HTSUS 8541.29.0000
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status RoHS Compliant
