- Product Model GAN039-650NBBHP
- Brand Nexperia
- RoHS Yes
- Description 650 V, 33 MOHM GALLIUM NITRIDE (
- Classification Single FETs, MOSFETs
Inventory:1500
Pricing:
- 1000 10.75
Technical Details
- Package / Case 12-BESOP (0.370", 9.40mm Width), Exposed Pad
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 60A (Tc)
- Rds On (Max) @ Id, Vgs 39mOhm @ 32A, 10V
- Power Dissipation (Max) 300W (Tc)
- Vgs(th) (Max) @ Id 4.8V @ 1mA
- Supplier Device Package CCPAK1212
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 400 V