• Product Model GAN039-650NBBHP
  • Brand Nexperia
  • RoHS Yes
  • Description 650 V, 33 MOHM GALLIUM NITRIDE (
  • Classification Single FETs, MOSFETs
  • PDF
Inventory:1500
Pricing:
  • 1000 10.75

Technical Details

  • Package / Case 12-BESOP (0.370", 9.40mm Width), Exposed Pad
  • Mounting Type Surface Mount
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Technology MOSFET (Metal Oxide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 60A (Tc)
  • Rds On (Max) @ Id, Vgs 39mOhm @ 32A, 10V
  • Power Dissipation (Max) 300W (Tc)
  • Vgs(th) (Max) @ Id 4.8V @ 1mA
  • Supplier Device Package CCPAK1212
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Vgs (Max) ±20V
  • Drain to Source Voltage (Vdss) 650 V
  • Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 400 V

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