Technical Details

• Package / Case TO-247-3
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 175°C
• Technology SiC (Silicon Carbide Junction Transistor)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 8A
• Rds On (Max) @ Id, Vgs 100mOhm @ 2A, 20V
• Power Dissipation (Max) 88W
• Vgs(th) (Max) @ Id 4V @ 10mA
• Supplier Device Package PG-TO247-3
• Grade Automotive
• Drive Voltage (Max Rds On, Min Rds On) 2V, 4V
• Drain to Source Voltage (Vdss) 1700 V
• Gate Charge (Qg) (Max) @ Vgs 16 nC @ 1200 V
• Input Capacitance (Ciss) (Max) @ Vds 142 pF @ 1000 V