Technical Details

• Package / Case TO-261-3
• Mounting Type Surface Mount
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 2.4A (Tc)
• Rds On (Max) @ Id, Vgs 980mOhm @ 1.5A, 10V
• Power Dissipation (Max) 9.1W (Tc)
• Vgs(th) (Max) @ Id 4V @ 1mA
• Supplier Device Package SOT-223-3
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 600 V
• Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 25 V