Technical Details

• Package / Case TO-247-4
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology SiCFET (Silicon Carbide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 34.5A (Tc)
• Rds On (Max) @ Id, Vgs 90mOhm @ 20A, 12V
• Power Dissipation (Max) 254.2W (Tc)
• Vgs(th) (Max) @ Id 6V @ 10mA
• Supplier Device Package TO-247-4
• Drive Voltage (Max Rds On, Min Rds On) 12V
• Vgs (Max) ±25V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 46 nC @ 15 V
• Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 100 V