- Product Model NVH4L040N120M3S
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description SIC MOS TO247-4L 40MOHM 1200V M3
- Classification Single FETs, MOSFETs
-
PDF
- 1 19.35
- 30 15.66
- 120 14.74
- 510 13.36
Technical Details
- Package / Case TO-247-4
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiC (Silicon Carbide Junction Transistor)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 54A (Tc)
- Rds On (Max) @ Id, Vgs 54mOhm @ 20A, 18V
- Power Dissipation (Max) 231W (Tc)
- Vgs(th) (Max) @ Id 4.4V @ 10mA
- Supplier Device Package TO-247-4L
- Grade Automotive
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Vgs (Max) +18V, -3V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 75 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 800 V
- Qualification AEC-Q101
Related Products
SIC_DISCRETE
Inventory: 28
SIC DISCRETE
Inventory: 274
SIC MOSFET 1200 V 14 MOHM M3P SE
Inventory: 189
SILICON CARBIDE (SIC) MOSFET ELI
Inventory: 286
SIC MOS TO247-3L 40MOHM 1200V M3
Inventory: 497
SICFET N-CH 1200V 102A TO247
Inventory: 966
SICFET N-CH 1200V 58A TO247-4
Inventory: 364
1200V, 31A, 4-PIN THD, TRENCH-ST
Inventory: 365
