- Product Model IPB083N10N3GATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 100V 80A D2PAK
- Classification Single FETs, MOSFETs
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Inventory:4882
Pricing:
- 1000 0.77
- 2000 0.73
- 5000 0.71
- 10000 0.68
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 80A (Tc)
- Rds On (Max) @ Id, Vgs 8.3mOhm @ 73A, 10V
- Power Dissipation (Max) 125W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 75µA
- Supplier Device Package PG-TO263-3
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3980 pF @ 50 V