- Product Model IPB039N10N3GATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 100V 160A TO263-7
- Classification Single FETs, MOSFETs
-
PDF
- 1000 1.51
- 2000 1.42
- 5000 1.37
Technical Details
- Package / Case TO-263-7, D2PAK (6 Leads + Tab)
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 160A (Tc)
- Rds On (Max) @ Id, Vgs 3.9mOhm @ 100A, 10V
- Power Dissipation (Max) 214W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 160µA
- Supplier Device Package PG-TO263-7
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 117 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 8410 pF @ 50 V
Related Products
MOSFET N-CH 100V 180A TO263-7
Inventory: 0
MOSFET N-CH 150V 174A TO263-7
Inventory: 1390
MOSFET N-CH 60V 180A TO263-7
Inventory: 6667
MOSFET
Inventory: 1311
MOSFET N-CH 100V 150A TO263
Inventory: 3730
N-CHANNEL 100-V (D-S) MOSFET D2P
Inventory: 1929
TRANS NPN 100V 4.5A SOT23F
Inventory: 23787
