• In Stock 29296
Pricing:
  • 5000 0.84
  • 10000 0.82

Technical Details

  • Package / Case 8-PowerTDFN
  • Mounting Type Surface Mount
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Technology MOSFET (Metal Oxide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 10.6A (Ta), 71A (Tc)
  • Rds On (Max) @ Id, Vgs 12.3mOhm @ 50A, 10V
  • Power Dissipation (Max) 114W (Tc)
  • Vgs(th) (Max) @ Id 2.4V @ 72µA
  • Supplier Device Package PG-TDSON-8-1
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
  • Vgs (Max) ±20V
  • Drain to Source Voltage (Vdss) 100 V
  • Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds 4900 pF @ 50 V
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

Related Products


DIODE, LOW LEAKAGE, 200MA, 75V,

In Stock: 10394

  • 8000: 0.04
  • 16000: 0.03
  • 24000: 0.03
  • 56000: 0.03
  • 200000: 0.03

MOSFET N-CH 100V 14A/79A TDSON

In Stock: 2518

  • 5000: 1.15

MOSFET N-CH 100V 6.5A/40A TDSON

In Stock: 21877

  • 5000: 0.43

DIODE GEN PURP 200V 3A SMB

In Stock: 119476

  • 3000: 0.22
  • 6000: 0.21
  • 9000: 0.19
  • 30000: 0.19

OPTIMOS 6 POWER-TRANSISTOR,120V

In Stock: 9375

  • 5000: 1.26

DIODE GEN PURP 200V 3A DO214AA

In Stock: 6868

  • 3000: 0.14
  • 6000: 0.14
  • 9000: 0.13
  • 30000: 0.12
  • 75000: 0.12

DIODE GEN PURP 200V 4A SMB

In Stock: 3190

  • 2500: 0.14
  • 5000: 0.13
  • 12500: 0.12
  • 25000: 0.12
  • 62500: 0.11
Top