- Product Model 2SK3700(F)
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 900V 5A TO3P
- Classification Single FETs, MOSFETs
-
PDF
Inventory:1503
Pricing:
- 1 2.33
- 10 1.94
- 25 1.87
- 100 1.54
- 300 1.5
- 500 1.3
- 1000 1.11
- 2400 1.05
- 4900 1.01
Technical Details
- Package / Case TO-3P-3, SC-65-3
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 5A (Ta)
- Rds On (Max) @ Id, Vgs 2.5Ohm @ 3A, 10V
- Power Dissipation (Max) 150W (Tc)
- Vgs(th) (Max) @ Id 4V @ 1mA
- Supplier Device Package TO-3P(N)
- Drain to Source Voltage (Vdss) 900 V
- Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1150 pF @ 25 V
Related Products
IC REG CTRLR PWM CM 8-DIP
Inventory: 0
IC REG CTRLR PWM CM 8-MINIDIP
Inventory: 1687
