- Product Model GT035N10Q
- Brand Goford Semiconductor
- RoHS Yes
- Description MOSFET N-CH 100V 190A TO-247
- Classification Single FETs, MOSFETs
-
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Inventory:1554
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 190A (Tc)
- Rds On (Max) @ Id, Vgs 3.5mOhm @ 30A, 10V
- Power Dissipation (Max) 277W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-247
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 6516 pF @ 50 V
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