Technical Details

• Package / Case 9-PowerTDFN
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 14.1A (Ta), 148A (Tc)
• Rds On (Max) @ Id, Vgs 6.32mOhm @ 50A, 10V
• Power Dissipation (Max) 2.5W (Ta), 278W (Tc)
• Vgs(th) (Max) @ Id 4.6V @ 159µA
• Supplier Device Package PG-TTFN-9-U02
• Drive Voltage (Max Rds On, Min Rds On) 0V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 150 V
• Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 4700 pF @ 75 V