- Product Model TRS10V65H,LQ
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description G3 SIC-SBD 650V 10A DFN8X8
- Classification Single Diodes
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Inventory:6375
Pricing:
- 2500 1.41
- 5000 1.35
Technical Details
- Package / Case 4-VSFN Exposed Pad
- Mounting Type Surface Mount
- Speed No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr) 0 ns
- Technology SiC (Silicon Carbide) Schottky
- Capacitance @ Vr, F 649pF @ 1V, 1MHz
- Current - Average Rectified (Io) 10A
- Supplier Device Package 4-DFN-EP (8x8)
- Operating Temperature - Junction 175°C
- Voltage - DC Reverse (Vr) (Max) 650 V
- Voltage - Forward (Vf) (Max) @ If 1.35 V @ 10 A
- Current - Reverse Leakage @ Vr 100 µA @ 650 V