- Product Model TRS2E65H,S1Q
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description G3 SIC-SBD 650V 2A TO-220-2L
- Classification Single Diodes
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Inventory:1550
Pricing:
- 1 1.5
- 50 1.21
- 100 0.96
- 500 0.81
- 1000 0.66
- 2000 0.62
- 5000 0.59
- 10000 0.58
Technical Details
- Package / Case TO-220-2
- Mounting Type Through Hole
- Speed No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr) 0 ns
- Technology SiC (Silicon Carbide) Schottky
- Capacitance @ Vr, F 135pF @ 1V, 1MHz
- Current - Average Rectified (Io) 2A
- Supplier Device Package TO-220-2L
- Operating Temperature - Junction 175°C
- Voltage - DC Reverse (Vr) (Max) 650 V
- Voltage - Forward (Vf) (Max) @ If 1.35 V @ 2 A
- Current - Reverse Leakage @ Vr 40 µA @ 650 V
